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Beam lead technology
Beam lead technology is a method of fabricating a semiconductor device. Its original application was to high-frequency silicon switching transistors and high-speed integrated circuits. It eliminated the labor-intensive wire-bonding process used for integrated circuits at the time, and allowed automated assembly of semiconductor chips onto larger substrates to produce hybrid integrated circuits. 〔 Rao R. Tummala et al, ''Microelectronics Packaging Handbook: Semiconductor packaging'', Springer, 1997 ISBN 0-412-08441-4, page 8-75 〕
==History==
In the early 1960s, M.P. Lepselter〔M.P. Lepselter, et al., "Beam-Lead Devices and Integrated Circuits", ''Proceedings of the IEEE'', Vol. 53 No 4 (1965), p.405.〕〔Presentation at Electron Devices Meeting, October 29, 1964, Washington, D.C.〕 developed the techniques for fabricating a structure consisting of electroforming an array of thick, self-supporting gold patterns on a thin film Ti-Pt Au base, hence the name "beams", deposited on the surface of a silicon wafer. The excess semiconductor from under the beams was removed, thereby separating the individual devices and leaving them with self-supporting beam leads or internal chiplets cantilevered beyond the semiconductor. The contacts served as electrical leads in addition to also serving the purpose of structural support for the devices.
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